2sK3403 2006-11-06 1 toshiba field effect transistor silicon n channel mos type ( -mos v ) 2sK3403 switching regulator applications ? low drain-source on resistance: r ds (on) = 0.29 ? (typ.) ? high forward transfer admittance: |y fs | = 5.8 s (typ.) ? low leakage current: i dss = 100 a (max) (v dss = 450 v) ? enhancement mode: v th = 3.0~5.0 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss 450 v drain-gate voltage (r gs = 20 k ) v dgr 450 v gate-source voltage v gss 30 v dc (note 1) i d 13 drain current pulse (note 1) i dp 52 a drain power dissipation (tc = 25c) p d 100 w single pulse avalanche energy (note 2) e as 350 mj avalanche current i ar 13 a repetitive avalanche energy (note 3) e ar 10 mj channel temperature t ch 150 c storage temperature range t stg ?55~150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decreas e in the reliability significantly even if the operating conditions (i.e. oper ating temperature/current/voltage, etc.) are within the absolute ma ximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling pr ecautions?/derating concept and methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). thermal characteristics characteristics symbol max unit thermal resistance, channel to case r th (ch-c) 1.25 c/w thermal resistance, channel to ambient r th (ch-a) 83.3 c/w note 1: ensure that the channel temperature does not exceed 150c. note 2: v dd = 90 v, t ch = 25c (initial), l = 3.46 mh, r g = 25 , i ar = 13 a note 3: repetitive rating: pulse width limited by maximum channel temperature this transistor is an electrostatic-sensit ive device. please handle with caution. unit: mm jedec D jeita D toshiba 2-10s1b weight: 1.5 g (typ.) jedec D jeita D toshiba 2-10s2b weight: 1.5 g (typ.)
2sK3403 2006-11-06 2 electrical characteristics (tc = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 25 v, v ds = 0 v ? ? 10 a gate-source breakdown voltage v (br) gss i g = 10 a, v ds = 0 v 30 ? ? v drain cut-off current i dss v ds = 450 v, v gs = 0 v ? ? 100 a drain-source breakdown voltage v (br) dss i d = 10 ma, v gs = 0 v 450 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 3.0 ? 5.0 v drain-source on resistance r ds (on) v gs = 10 v, i d = 6 a ? 0.29 0.4 forward transfer admittance ? y fs ? v ds = 10 v, i d = 6 a 3.0 5.8 ? s input capacitance c iss ? 1600 ? reverse transfer capacitance c rss ? 17 ? output capacitance c oss v ds = 25 v, v gs = 0 v, f = 1 mhz ? 220 ? pf rise time t r ? 28 ? turn-on time t on ? 45 ? fall time t f ? 10 ? switching time turn-off time t off ? 56 ? ns total gate charge q g ? 34 ? gate-source charge q gs ? 19 ? gate-drain charge q gd v dd ? 360 v, v gs = 10 v, i d = 13 a ? 15 ? nc source-drain ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit continuous drain reverse current (note 1) i dr ? ? ? 13 a pulse drain reverse current (note 1) i drp ? ? ? 52 a forward voltage (diode) v dsf i dr = 13 a, v gs = 0 v ? ? ?1.7 v reverse recovery time t rr ? 300 ? ns reverse recovery charge q rr i dr = 13 a, v gs = 0 v, di dr /dt = 100 a/ s ? 3.4 ? c marking duty < = 1%, t w = 10 s 0 v 10 v v gs r l = 33.3 v dd ? 200 v i d = 6 a output 10 lot no. a line indicates lead (pb)-free package or lead (pb)-free finish. K3403 part no. (or abbreviation code)
2sK3403 2006-11-06 3 forward transfer admittance ? y fs ? (s) drain-source voltage v ds (v) drain-source voltage v ds (v) i d ? v ds drain current i d (a) drain-source voltage v ds (v) i d ? v ds drain current i d (a) gate-source voltage v gs (v) i d ? v gs drain current i d (a) gate-source voltage v gs (v) v ds ? v gs drain current i d (a) ? y fs ? ? i d drain current i d (a) r ds (on) ? i d drain-source on resistance r ds (on) ( ) 8 0 0 2 4 6 10 2 4 8 6 10 v gs = 6.0 v 7.25 7.5 10 15 common source tc = 25c pulse test 6.5 7.0 20 16 12 8 4 0 0 10 20 30 40 50 v gs = 6 v common source tc = 25c pulse test 7 7.5 15 10 8.25 8.5 8 6.5 0 30 10 20 3 9 6 12 common source v ds = 20 v pulse test tc = ? 55c 25 100 0 2 4 8 10 0 i d = 13 a 4 8 12 20 3 6 common source tc = 25c pulse test 16 6 10 100 10 1 0.1 1 0.1 common source tc = 25c pulse test v gs = 10 v 15 common source v ds = 20 v pulse test 25 100 tc = ? 55c 0.1 1 10 100 50 10 1 0.1
2sK3403 2006-11-06 4 drain power dissipation p d (w) gate threshold voltage v th (v) case temperature tc (c) r ds (on) ? tc drain-source on resistance r ds (on) ( ) drain-source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) drain-source voltage v ds (v) capacitance ? v ds capacitance c (pf) case temperature tc (c) v th ? tc case temperature tc (c) p d ? tc gate-source voltage v gs (v) total gate charge q g (nc) dynamic input/output characteristics drain-source voltage v ds (v) 160 0 1 3 2 6 5 4 ? 80 ? 40 0 40 80 120 common source v ds = 10 v i d = 1 ma pulse test 0 40 120 80 200 160 200 0 40 80 120 160 500 400 0 100 200 300 0 10 20 30 50 40 common source i d = 13 a tc = 25c pulse test v ds 360 180 v gs v dd = 90 v 0 4 8 12 20 16 0 ? 0.4 0.1 1 10 100 ? 0.6 ? 0.8 ? 1.2 ? 0.2 ? 1 10 1 3 v gs = 0, ? 1 v common source tc = 25c pulse test 5 1 0.1 10 100 1000 10000 1 10 100 1000 common source v gs = 0 v f = 1 mhz tc = 25c c iss c oss c rss 1.0 0.6 0 ? 80 ? 40 0 40 80 160 120 0.2 0.4 i d = 13 a 0.8 3 6 common source v gs = 10 v pulse test
2sK3403 2006-11-06 5 drain current i d (a) channel temperature (initial) tch (c) avalanche energy e as (mj) r th ? t w pulse width t w (s) normalized transient thermal impedance r th (t) /r th (ch-c) ?15 v 15 v test circuit wave form i ar b vdss v dd v ds r g = 25 v dd = 90 v, l = 3.46 mh ? ? ? ? ? ? ? ? ? ???= v dd b vdss b vdss 2 il 2 1 as drain-source voltage v ds (v) e as ? t ch safe operating area 100 200 300 50 100 0 400 25 75 150 125 0.1 10 100 1 m 10 m 100 m 1 10 t p dm t duty = t/t r th (ch-c) = 1.25c/w duty = 0.5 0.2 0.1 single pulse 0.05 0.02 0.01 0.01 0.03 0.05 1 0.3 0.5 3 * single nonrepetitive pulse tc = 25c curves must be derated linearly with increase in temperature. dc operation tc = 25c 100 s * 1 ms * v dss max 0.05 0.1 1 10 100 0.03 0.5 0.3 5 3 50 30 30 10 100 1000 300 3 i d max (pulse) * i d max ( continuous )
2sK3403 2006-11-06 6 restrictions on product use 20070701-en ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringement s of patents or other rights of the third parties which may result from its use. no license is granted by implic ation or otherwise under any patents or other rights of toshiba or the third parties. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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